Insciences J. 2011, 1(2), 80-89;doi:10.5640/insc.010280

Review Paper, Section: Nanotechnology

Graphene Doping: A Review

Beidou Guo^1,2, Liang Fang^{1 *} , Baohong Zhang², Jian Ru Gong^{2 *}

¹ Department of Applied Physics, Chongqing University, Chongqing 400044, China
² Laboratory for Nanodevices, National Center for Nanoscience and Technology, China, 11 Zhongguancun Beiyitiao, Beijing 100190, P. R. China

^* Author to whom correspondence should be addressed.

Published: April 27, 2011

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Abstract

Graphene, a new material for the electron-device community, has many extraordinary properties. Especially, it provides a perfect platform to explore the unique electronic property in absolutely two-dimensions. However, most electronic applications are handicapped by the absence of a semiconducting gap in pristine graphene. To control the semiconducting properties of graphene, doping is regarded as one of the most feasible methods. Herein, a brief review is given on the recent research progress of graphene doping, which is roughly divided into three categories: First, the hetero atom doping, including arc discharge, chemical vapor deposition, electrothermal reaction and ion-irradiation approaches; Second, the chemical modification strategy; Third, the method of electrostatic field tuning. In addition, the various potential applications of the above doping methods are also introduced.

doping, electronic property, electrostatic field, graphene, molecular modification